THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

Low-Noise

Matched Transistor Array Die

FEATURES

4 Matched NPN and 4 Matched PNP

Monolithic Construction

Low Noise
- 0.75 nV

Hz (PNP)

- 0.8 nV

Hz (NPN)

High Speed
- f

= 350 MHz (NPN)

- f

= 325 MHz (PNP)

Excellent Matching 500

typical between devices of same
gender

Dielectrically Isolated for low
crosstalk, high DC isolation, and
high temp operation

36V V

CEO

APPLICATIONS

Microphone Preamplifiers

Current Sources

Current Mirrors

Log/Antilog Amplifiers

Multipliers

Servos

Description

The THAT 380G is a large-geometry, 8-transistor,

monolithic NPN/PNP array intended for use in
multichip modules, hybrids, and chip-on-board ap-
plications. The individual devices exhibit both high
speed and low noise, and are well-matched between
transistors of the same gender.

Fabricated in a dielectrically isolated, comple-

mentary bipolar process, each transistor is electri-
cally insulated from the others by a layer of
insulating oxide (not the reverse-biased PN junctions
used in conventional arrays) and exhibit inter-device
crosstalk and DC isolation similar to that expected
from discrete transistors. The resulting low collec-
tor-to-substrate capacitance produces a typical NPN

of 350MHz (325 MHz for the PNPs).

Substrate

93biasing is not required for normal operation,
though the substrate should be grounded to optimize
speed and minimize crosstalk.

While not guaranteed to meet its datasheet speci-

fications outside the commercial temperature range,
the transistors on the 380G will typically operate at
much higher temperatures than ordinary junc-
tion-isolated devices with similar packing density.

Quad transistor arrays in DIP and SO packages

with similar performance characteristics are also
available from THAT Corporation. Please contact us
directly or through your local distributor for more
information.

T H A T

C o r p o r a t i o n

THAT 380G

GKH

Y
K

PNP

NPN

PNP

NPN

Fig 1. 380G Die layout

600042 Rev E

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

Page 2

THAT380G Transistor Array Die

SPECIFICATIONS

Maximum Ratings (T

= 25°C)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

NPN Collector-Emitter Voltage

CEO

= 1 mAdc, I

= 0

NPN Collector-Base Voltage

CBO

=10

mAdc, I

NPN Emitter-Base Voltage

EBO

= 100

mAdc, I

= 0

NPN Collector Current

C MAX

NPN Emitter Current

E MAX

PNP Collector-Emitter Voltage

CEO

= 1 mAdc, I

= 0

PNP Collector-Base Voltage

CBO

= 10

mAdc, I

= 0

PNP Emitter-Base Voltage

EBO

= 100

mAdc, I

= 0

PNP Collector Current

C MAX

PNP Emitter Current

E MAX

Collector-Collector Voltage

±100

±200

Emitter-Emitter Voltage

±100

±200

Operating Temperature Range

°C

Maximum Junction Temperature

JMAX

150

°C

Storage Temperature

STORE

-45

125

°C

NPN Electrical Characteristics

Parameter

Symbol

Conditions

Min

Typ

Max

Units

NPN Current Gain

= 10 V

= 1 mA

100

= 10

100

NPN Current Gain Matching

= 10 V, I

= 1 mA

NPN Noise Voltage Density

= 10 V, I

= 1 mA, 1 kHz

0.8

ÖHz

NPN Gain-Bandwidth Product

= 1 mA, V

= 10 V

350

MHz

NPN

BE3

-V

BE4 ;

BE5

-V

BE6

)

= 1 mA

±0.5

±3

= 10

±0.5

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

600042 Rev E

Page 3

1. All specifications subject to change without notice.
2. Unless otherwise noted, T

=25°C.

SPECIFICATIONS

(Cont'd)

Parameter

Symbol

Conditions

Min

Typ

Max

Units

NPN

-I

B4,

-I

)

= 1 mA

±500

±1500

= 10

±5

NPN Collector-Base Leakage Current I

CBO

= 25 V

NPN Bulk Resistance

= 0 V, 10

mA < I

< 10 mA

NPN Base Spreading Resistance

= 10 V, I

= 1 mA

NPN Collector Saturation Voltage

CE(SAT)

= 1 mA, I

= 100

0.05

NPN Output Capacitance

= 10 V, I

= 0 mA, 100 kHz

NPN Collector-CollectorCapacitance (Q3-Q4, Q5-Q6)

= 0 V, 100 kHz

0.7

PNP Electrical Characteristics

Parameter

Symbol

Conditions

Min

Typ

Max

Units

PNP Current Gain

= 10 V

= 1 mA

= 10

PNP Current Gain Matching

= 10 V, I

= 1 mA

PNP Noise Voltage Density

= 10 V, I

= 1 mA, 1 kHz

0.75

ÖHz

PNP Gain-Bandwidth Product

= 1 mA, V

= 10 V

325

MHz

PNP

BE1

-V

BE2;

BE7

-V

BE8

)

= 1 mA

±0.5

±3

= 10

±0.5

PNP

-I

B2;

-I

)

= 1 mA

±700

±1800

= 10

±7

PNP Collector-Base

Leakage Current

CBO

= 25 V

PNP Bulk Resistance

= 0 V, 10

mA < I

< 10 mA

PNP Base Spreading Resistance

= 10 V, I

= 1 mA

PNP Collector Saturation Voltage

CE(SAT)

= 1 mA, I

= 100

0.05

PNP Output Capacitance

= 10 V, I

= 0 mA, 100 kHz

PNP Collector-Collector Capacitance (Q1-Q2; Q7-Q8)

= 0 V, 100 kHz

0.6

THAT Corporation; 45 Sumner Street; Milford, Massachusetts 01757-1656; USA

Tel: +1 508 478 9200; Fax: +1 508 478 0990; Web: www.thatcorp.com

Page 4

THAT380G Transistor Array Die

GKH

Y
K

A
T

312

17C

18B

*0.021"

0.001

* Custom thicknesses are available. Contact THAT Corporation for more information.

232

1613u

95.5

286.5

411.5

477.5

86.

77.

68.

-95.5

-286.5

-411.5

-477.5

-9

-2

-4

-6

90u

Figure 2. Die dimensions

Information furnished by THAT Corporation is believed to be accurate and reliable. However no responsibility is as-

sumed by THAT Corporation for it's use nor for any infringements of patents or other rights of third parties which may
result from it's use.

LIFE SUPPORT POLICY

THAT Corporation products are not designed for use in life support equipment where malfunction of such products

can reasonably be expected to result in personal injury or death. The buyer uses or sells such products for life suport
application at the buyer's own risk and agrees to hold harmless THAT Corporation from all damages, claims, suits or
expense resulting from such use.

CAUTION: THIS IS AN ESD (ELECTROSTATIC DISCHARGE) SENSITIVE DEVICE.

It can be damaged by the currents generated by electrostatic discharge. Static charge and therefore dangerous volt-

ages can accumulate and discharge without detection causing a loss of function or performance to occur.

The transistors in this device are unprotected in order to maximize performance and flexibility. They are more sen-

sitive to ESD damage than many other ICs which include protection devices at their inputs. Note that all of the pins
(not just the "inputs") are susceptible.

Use ESD preventative measures when storing and handling this device. Unused devices should be stored in conduc-

tive packaging. Packaging should be discharged to the destination socket before the devices are removed. ESD damage
can occur to these devices even after they are installed in a board-level assembly. Circuits should include specific and
appropriate ESD protection.

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